TPS1100, TPS1100Y دیتاشیت

TPS1100, TPS1100Y

مشخصات دیتاشیت

نام دیتاشیت TPS1100, TPS1100Y
حجم فایل 755.541 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت TPS1100, TPS1100Y

دانلود دیتاشیت

سایر مستندات

TPS1100D 15 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments TPS1100D
  • Operating Temperature: -40°C~+150°C@(Tj)
  • Power Dissipation (Pd): 791mW
  • Total Gate Charge (Qg@Vgs): 5.45nC@10V
  • Drain Source Voltage (Vdss): 15V
  • Continuous Drain Current (Id): 1.6A
  • Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 180mΩ@1.5A,10V
  • Package: SOP-8
  • Manufacturer: Texas Instruments
  • FET Type: P-Channel
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Base Part Number: TPS110
  • Supplier Device Package: 8-SOIC
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 15V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Mounting Type: Surface Mount
  • Rds On (Max) @ Id, Vgs: 180mOhm @ 1.5A, 10V
  • Packaging: Tube
  • Series: -
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
  • Vgs (Max): +2V, -15V
  • Part Status: Active
  • Power Dissipation (Max): 791mW (Ta)
  • Technology: MOSFET (Metal Oxide)
  • detail: P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC

محصولات مشابه